EE Web | Sebastien Couet | Septembre 22, 2021
Magneto-resistive random access memory (MRAM) is a non-volatile memory technology that relies on the (relative) magnetization state of two ferromagnetic layers to store binary information. Throughout the years, different flavors of MRAM memories have emerged, making MRAM increasingly interesting for cache applications and in-memory computing.
In this article, We discuss challenges and promises of the various MRAM family members (including spin-transfer torque (STT), spin-orbit torque (SOT), voltage-controlled (VCMA- and VG-SOT) and domain-wall MRAM). They highlight imec’s major role, i.e., developing a CMOS-compatible 300mm platform for bringing these MRAM technologies to the next level.