SEMICONDUCTOR ENGINEERING | JANUARY 13TH, 2022
Spin-orbit torque memory adds endurance and faster write speeds, but displacing existing memories is still not easy.
In an era of new non-volatile memory (NVM) technologies, yet another variation is poised to join the competition — a new version of MRAM called spin-orbit torque, or SOT-MRAM. What makes this one particularly interesting is the possibility that someday it could supplant SRAM arrays in systems-on-chip (SoCs) and other integrated circuits.